Method of manufacturing LED component by integrating epitaxial structure and package substrate together

ABSTRACT

An integral LED component is mounted into a hollow carrier. The carrier has two conductive electrodes with opposite polarities. The LED component comprises a substrate, N number of LED epitaxial structures where N is a number greater than one, a third electrode and a fourth electrode. The N number of LED epitaxial structures are formed on the upper surface of the substrate, the at least one of the N number of LED epitaxial structures comprises a first and a second electrode. The third and fourth electrodes are formed on the upper surface and located outside the N number of LED epitaxial structures, the respective electrodes are electrically connected to form a circuit. The two conductive electrodes of the hollow carrier are used for electrically connecting the third and fourth electrodes of the substrate, and the lower surface of the substrate is exposed to the hollow carrier.

PRIORITY CLAIM

This application claims the benefit of the filing date of Taiwan PatentApplication No. 102112647, filed Apr. 10, 2013, and U.S. patentapplication Ser. No. 13/871,793 filed Apr. 26, 2013, entitled “LEDCOMPONENT BY INTEGRATING EPITAXIAL STRUCTURE AND PACKAGE SUBSTRATETOGETHER AND METHOD OF MANUFACTURING THE SAME,” and the contents ofwhich is hereby incorporated by reference in its entirety.

FIELD OF THE INVENTION

The present invention relates to an LED component by integratingepitaxial structures and a package substrate together and the method ofmanufacturing the same, and more particularly, to an LED component thatthe carrier substrate can be used as package substrate directly and thepackaging process of LED epitaxial also can be completed on thesubstrate directly. In actual application, the substrate of the LEDcomponent can be mounted and contacted with a heat conductive ordissipation device. The integral LED component is fabricated by waferlevel process and cut from the wafer to form an independent component.Different manufacturing processes allow the integral LED component to bemade into a Vertical LED structure or a Lateral LED structure.

BACKGROUND OF THE INVENTION

In the LED industry, the manufacturing process of LED chips and thepackaging process of LED are independent processes. The LED lightingunit still needs to be cut and tested to form a final chip product nomatter what substrate is used in LED epitaxial process. The form of LEDchip is usually designed as a rectangular figure due to theconsideration of operability in the cutting process despite the LED chipis vertical structure or lateral structure, wire bonding process orflip-chip process. Then, the rectangular LED chip is mounted on asubmount by die bonding and welded onto a PCB by method of SMT to forman LED package unit. The LED package unit can also be formed by mountingthe chip on a PCB directly (COB method). The package PCB then needs tobe mounted and contacted with a heat conductive or a dissipation deviceto solve the heat dissipation problem, and the heat due to electricalcurrent in the epitaxial structures needs to be dissipated by heatconduction from the substrates to the heat dissipation devices. However,if the electric power or power density is too high, the heat resistancecan make the temperature of the LED too high which lowers the life timeand optical properties of the LED.

Please refer to FIG. 1, FIG. 1A and FIG. 1B are schematic diagramsillustrating LED chips, LED package and heat dissipation in the priorart. An LED chip 1 is composed of an epitaxial structure 10 and acarrier substrate 11. The LED chip 1 is tested, cut from a wafer, andthen packaged to form an LED unit. As shown in FIG. 1A, an LED packageunit is formed by mounting the LED chip 1 on a submount 12 with diebonding, wire bonding and phosphor coating processes. In actualapplication, the LED unit with the submount 12 still needs to be mountedonto a heat conductive PCB, the PCB 13 then is mounted and contactedwith a heat dissipation device 14. Another application requirement forhigh power illumination, as shown in FIG. 1B, an LED package unit isformed by mounting the LED chip 1 on a heat conductive PCB directly(COB, Chip-on-Board). The COB unit is mounted and contacted with a heatdissipation device 14. However, in the prior art of FIG. 1A or FIG. 1B,the manufacturing process for the LED chip 1 and the packaging processof LED are independent processes.

Generally speaking, there are two types of the structures for LED chips,lateral types and vertical types. The lateral type is forming LEDepitaxial structures and electrodes on an epitaxial wafer, where theepitaxial wafer needs to go through a thinning process to become acarrier substrate for epitaxial structures and then be cut into LEDchips. The vertical type is transferring LED epitaxial structures froman epitaxial wafer to a carrier wafer, where the carrier wafer stillneeds to go through a thinning process and form electrodes, and then becut into LED chips. It does not matter whether the LED chip is a lateraltype or a vertical type, the LED chips still need an added packagesubstrate to that goes through die bonding, wire bonding and phosphorcoating processes to connect an external power and a heat dissipationdevice. For the demand of high power density, high luminous flux, highworking life and low cost, the prior art of FIG. 1A and FIG. 1B stillhave some limits.

SUMMARY OF THE INVENTION

One objective of the present invention is to provide an LED component byintegrating epitaxial structures and a package substrate together andthe method of manufacturing the same so as to solve the problem in theprior art.

The integral LED component of the present invention is mounted into ahollow area of a hollow carrier, the hollow carrier has two conductiveelectrodes with opposite polarities used for connecting to an externalpower. The integral LED component comprises a substrate, N number of LEDepitaxial structures where N is a natural number greater than one, atleast one third electrode and at least one fourth electrode. Thesubstrate has an upper surface and a lower surface. The N number of LEDepitaxial structures are formed on the upper surface of the substrate,the at least one of the N number of LED epitaxial structures comprisesat least one first electrode and at least one second electrode. Further,the polarities of the at least one first electrode and the at least onesecond electrode are opposite. The at least one third electrode and theat least one fourth electrode are formed on the upper surface andlocated outside the N number of LED epitaxial structures, the at leastone third electrode and the at least one fourth electrode areelectrically connected to the at least one first electrode and the atleast one second electrode to form a circuit. The polarities of the atleast one third electrode and the at least one fourth electrode areopposite. Additionally, the two conductive electrodes of the hollowcarrier are used for electrically connecting the at least one thirdelectrode and the at least one fourth electrode of the substrate, andthe lower surface of the substrate is exposed to the hollow carrier.

In another embodiment, the present invention provides another LEDcomponent by integrating epitaxial structures and a package substratetogether. The integral LED component is mounted into a hollow area of ahollow carrier, the hollow carrier has two conductive electrodes withopposite polarities used for connecting to an external power. Theintegral LED component comprises a substrate, an LED epitaxialstructure, at least one third electrode and at least one fourthelectrode. The substrate has an upper surface and a lower surface. TheLED epitaxial structure is formed on the upper surface of the substrate,the LED epitaxial structure comprises at least one first electrode andat least one second electrode. The polarities of the at least one firstelectrode and the at least one second electrode are opposite. The atleast one third electrode and the at least one fourth electrode areformed on the upper surface and located outside the LED epitaxialstructure, the at least one third electrode and the at least one fourthelectrode are electrically connected to the at least one first electrodeand the at least one second electrode to form a circuit. The polaritiesof the at least one third electrode and the at least one fourthelectrode are opposite. Additionally, the two conductive electrodes ofthe hollow carrier are used for electrically connecting the at least onethird electrode and the at least one fourth electrode of the substrate,and the lower surface of the substrate is exposed to the hollow carrier.

Alternatively, the present invention also provides a method ofmanufacturing an integral LED component. Because the substrate of theinvention is not only a carrier substrate but also a package substrate,and the lower surface of the substrate can be mounted directly onto aheat conductive or a dissipation device, the heat conduction from theepitaxial structures to the lower surface of the substrate is shortest.Due to this reason, the heat resistance (Rjc) in the integral LEDcomponent can be dramatically reduced. The structure of this integralLED component can be applied in vertical LED structures and lateral LEDstructures.

According to the above, the cost of the integral LED component of thepresent invention can be greatly reduced due to the simplification ofthe process as well as the reduction of material consumption.

Many other advantages and features of the present invention will befurther understood by the following detailed descriptions and theappended drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A and FIG. 1B are schematic diagrams illustrating LED chips, LEDpackage and heat dissipation in the prior art.

FIG. 2A and FIG. 2B are schematic diagrams illustrating LED epitaxialstructures, LED package, a hollow carrier and a heat conductive ordissipation device of an integral LED according to the invention.

FIG. 3 is a schematic diagram illustrating an integral LED componentaccording to an embodiment of the invention.

FIG. 4A is a schematic diagram illustrating vertical LED epitaxialstructures according to an embodiment of the invention.

FIG. 4B is a schematic diagram illustrating lateral LED epitaxialstructures according to an embodiment of the invention.

FIG. 5A and FIG. 5B are schematic diagrams illustrating a upper surfaceof LED epitaxial structures according to an embodiment of the invention.

FIG. 6 is a top view diagram illustrating epitaxial structures andparallel connected electrodes of a vertical LED according to anembodiment of the invention.

FIG. 7 is a schematic diagram illustrating different-sized integral LEDcomponents on a wafer according to an embodiment of the invention.

FIG. 8A to FIG. 8C are schematic diagrams illustrating an integral LEDcomponent, a hollow carrier and a front view of the integral LEDcomponent mounted into the hollow carrier.

FIG. 9A to FIG. 9C are schematic diagrams illustrating an integral LEDcomponent, a hollow carrier and a back view of the integral LEDcomponent mounted into the hollow carrier.

FIG. 10 is a flow chart illustrating a method of manufacturing avertical integral LED component according to an embodiment of theinvention.

FIG. 11 is a flow chart illustrating a method of manufacturing a lateralintegral LED component according to an embodiment of the invention.

To facilitate understanding, identical reference numerals have beenused, where it is possible to designate identical elements that arecommon to the figures.

DETAILED DESCRIPTION

The present invention is related to an LED component by integratingepitaxial structures and a package substrate together and the method ofmanufacturing the same. The present invention can reduce the costbecause of simplification of the manufacturing process as well as thereduction of material consumption. Further, the present invention canimprove the efficiency of an LED component by the reduction of heatconduction resistance to solve the problem in the prior art.

Please refer to FIG. 2A and FIG. 2B, FIG. 2A and FIG. 2B are schematicdiagrams illustrating LED epitaxial structures, an LED package, a hollowcarrier and a heat conductive or a dissipation device of an integral LEDaccording to the invention. According to an embodiment, an LED component2 integrates epitaxial structures and a package substrate together thatcan be mounted into a hollow area 301 of a hollow carrier 30 so that thelower surface 222 of the substrate 22 can be mounted and contacted witha heat conductive or a dissipation device. As shown in FIG. 2A, the LEDepitaxial structures are formed on the upper surface 221 of thesubstrate 22, that is to say, the substrate 22 of the LED component 2 isnot only a carrier substrate but also a package substrate, and the lowersurface 222 of the substrate 22 can be mounted and contacted with a heatdissipation device 24. As shown in FIG. 2B, the lower surface 222 of thesubstrate 22 is mounted and contacted with a heat conductive device 26,where the heat conductive device 26 is a flat miniature heat pipe.

To further describe the structures of the present invention, pleaserefer to FIG. 3. FIG. 3 is a schematic diagram illustrating an integralLED component according to an embodiment of the invention. According toan embodiment of FIG. 3, the integral LED component 3 of the presentinvention is mounted into a hollow area 301 of a hollow carrier 30. Thehollow carrier 30 has two conductive electrodes 302, 303 with oppositepolarities used for connecting to an external power. The integral LEDcomponent comprises a substrate 31, N number of LED epitaxial structures32 where N is a natural number greater than one, at least one thirdelectrode 33 and at least one fourth electrode 34. The substrate has anupper surface 311 and a lower surface 312. The N number of LED epitaxialstructures 32 are formed on the upper surface 311 of the substrate 31,the at least one of the N number of LED epitaxial structures 32comprises at least one first electrode 321 and at least one secondelectrode 322. Further, the polarities of the at least one firstelectrode 321 and the at least one second electrode 322 are opposite.The at least one third electrode 33 and the at least one fourthelectrode 34 are formed on the upper surface 311 and located outside theN number of LED epitaxial structures 32, the at least one thirdelectrode 33 and the at least one fourth electrode 34 are electricallyconnected to the at least one first electrode 321 and the at least onesecond electrode 322 to form a circuit. The polarities of the at leastone third electrode 33 and the at least one fourth electrode 34 areopposite. Additionally, the two conductive electrodes 302, 303 of thehollow carrier 30 are used for electrically connecting the at least onethird electrode 33 and the at least one fourth electrode 34 of thesubstrate 31; and meanwhile, the lower surface 311 of the substrate 31is exposed to the hollow carrier 30.

In this embodiment, the at least one first electrode 321 is connectedwith the at least one third electrode 33, outside the N number of LEDepitaxial structures 32 is a lens 325, and each LED epitaxial structures32 comprises a n-type semiconductor layer 326, a p-type semiconductorlayer 327, a MQW layer 328 and a light-reflective layer 329. The n-typesemiconductor layer 326 is coated with a dielectric layer 324, where thedielectric layer 324 is coated with a conductor material layer 323 forelectrically connecting the at least one first electrode 321 and the atleast one second electrode 322. Additionally, the two conductiveelectrodes 302, 303 of the hollow carrier 30 are electrically connectedwith the at least one third electrode 33 and the at least one fourthelectrode 34 of the substrate 31 of the integral LED component 3 by asolderable metal 36 so that the at least one third electrode 33 and theat least one fourth electrode 34 can be electrically connected with theat least one first electrode 321 and the at least one second electrode322 of the N number of LED epitaxial structures 32 to form a circuit.However, the present invention is not limited to the above method, theat least one first electrode 321 and the at least one third electrode 33can be made integral too.

Furthermore, the lower surface 312 of the substrate 31 of the integralLED component 3 is mounted and contacted with a heat dissipation device35. The substrate 31 is chosen from silicon, germanium, SiC, GaN, GaAs,sapphire or metal with dielectric layer. In another embodiment, thesubstrate 31 can also be made from copper, other metals, or other alloysubstrates, and the lower surface of the substrate 31 has a dielectriclayer formed thereon. In addition, the substrate 31 is formed either bychemical deposition or physical deposition processes.

Please refer to FIG. 4A and FIG. 4B. FIG. 4A is a schematic diagramillustrating vertical LED epitaxial structures according to anembodiment of the invention and FIG. 4B is a schematic diagramillustrating lateral LED epitaxial structures according to an embodimentof the invention. In the integral LED component of the presentinvention, the N number of LED epitaxial structures 42 can be eithervertical structures (FIG. 4A) or lateral structures (FIG. 4B). If theLED epitaxial structures 42 are vertical structures, the at least onefirst electrode 421 of the LED epitaxial structures 42 is a bondingmetal layer, and the LED epitaxial structures 42 are transferred fromanother epitaxial substrate onto the substrate 41. If the LED epitaxialstructures 42 are lateral structures, the LED epitaxial structures 42are grown directly on the substrate 41 by an epitaxial process. In anexample of the vertical structures (FIG. 4A), the LED epitaxialstructures 42 comprises at least one first electrode 421 and at leastone second electrode 422, the polarities of the at least one firstelectrode 421 and the at least one second electrode 422 are opposite,moreover, at least one third electrode 43 and at least one fourthelectrode 44 are formed on the upper surface of the substrate 41 andlocated outside the LED epitaxial structures 42. The LED epitaxialstructures 42 comprises a dielectric layer 424, the dielectric layer 424is coated with a conductor material layer 423 for electricallyconnecting the at least one second electrode 422 and the at least onefourth electrode 44. In an example of the lateral structures (FIG. 4B),the at least one third electrode 43 and the at least one fourthelectrode 44 are electrically connected to the at least one firstelectrode 421 and the at least one second electrode 422 to form acircuit through the conductor material layer 423. The polarities of theat least one third electrode 43 and the at least one fourth electrode 44are opposite.

In this embodiment, each LED epitaxial structure of the presentinvention can be composed of a plurality of epitaxial substructureswhich have positive and negative electrodes. FIG. 5A and FIG. 5B areschematic diagrams illustrating an upper surface of LED epitaxialstructures according to an embodiment of the invention. As shown in FIG.5A and FIG. 5B, the shape of the upper surface of the N number of LEDepitaxial structures 52 can be hexagonal or circular. There is anoptical lens structure disposed above each N number of LED epitaxialstructures. The at least one third electrode 53 and the at least onefourth electrode 54 are formed on the upper surface 511 and are locatedoutside the N number of LED epitaxial structures 52. However, thepresent invention is not limited to this, the shape of the upper surfaceof the N number of LED epitaxial structures 52 can be designed withother geometric shapes or mixtures with various shapes for improving theluminous efficiency.

Please refer to FIG. 6. FIG. 6 is a top view diagram illustratingepitaxial structures and parallel connected electrodes of a vertical LEDaccording to an embodiment of the invention. In this embodiment, the atleast one first electrode of the N number of LED epitaxial structures 62is electrically connected with the at least one third electrode 63 ofthe upper surface 611, and the at least one second electrode of the Nnumber of LED epitaxial structures 62 is electrically connected with theat least one fourth electrode 64 of the upper surface 611, so as to forma parallel circuit. The parallel circuit formed in the N number of LEDepitaxial structures can be put into the integral LED component forcurrent sharing to reduce the current through each epitaxial structure.However, the present invention is not limited to the above method. Inanother embodiment, the at least one first electrode and the at leastone third electrode are positive electrodes, and the at least one secondelectrode and the at least one fourth electrode are negative electrodes.The N number of LED epitaxial structures are connected in series so asto electrically connect the at least one first electrode and the atleast one second electrode as well as the at least one third electrodeand the at least one fourth electrode of the upper surface to form aseries circuit. Furthermore, in the integral LED component of thepresent invention, the N number of LED epitaxial structures can bedivided into M number of structure groups, where M is a natural numbergreater than one. The LED epitaxial structures in each structure groupare connected with each other in series to electrically connect the atleast one first electrode and the at least one second electrode, and theM number of structure groups are connected in parallel to electricallyconnect the at least one third electrode and the at least one fourthelectrode of the upper surface, to further form a combined series andparallel circuit.

Please refer to FIG. 3 again. According to another embodiment of thepresent invention, the at least one first electrode 321, the at leastone second electrode 322, the at least one third electrode 33 and the atleast one fourth electrode 34 are connected through the conductormaterial 323 formed on the dielectric layer 324. In addition, the atleast one third electrode 33 and the at least one fourth electrode 34 onthe upper surface 311 of the substrate 31 can be used as probeelectrodes in the measurement of the integral LED component 3. When theat least one third electrode 33 and the at least one fourth electrode 34are connected with the external power, the upper surface 311 and thelower surface 312 of the substrate 31 are in an electrically insulatedstate.

Please refer to FIG. 7. FIG. 7 is a schematic diagram illustratingdifferent-sized integral LED components on a wafer according to anembodiment of the invention. As shown in FIG. 7, the integral LEDcomponent 70 of the present invention can be cut into various sizes froma wafer 7, thus, the number of LED epitaxial structures 72 on thesubstrate 71 changes with different designs.

Please refer to FIG. 8A to FIG. 8C and FIG. 9A to FIG. 9C together. FIG.8A to FIG. 8C are schematic diagrams illustrating an integral LEDcomponent, a hollow carrier and a front view of the integral LEDcomponent mounted into the hollow carrier; FIG. 9A to FIG. 9C areschematic diagrams illustrating an integral LED component, a hollowcarrier and a back view of the integral LED component mounted into thehollow carrier. In this embodiment, the upper surface 811 of theintegral LED component 8 comprises N number of LED epitaxial structures82, the integral LED component 8 is mounted into the hollow area 801 ofthe hollow carrier 80 to expose the lower surface 812 of the substrate81. The hollow carrier 80 has two conductive electrodes 802, 803 withopposite polarities used for connecting to an external power. When theintegral LED component 8 is mounted into the hollow area 801 of thehollow carrier 80, the two conductive electrodes 802, 803 of the hollowcarrier 80 are electrically connected with the at least one thirdelectrode 83 and the at least one fourth electrode 84 of the substrate81. In particular, a lower surface of the hollow carrier 80 is coplanarwith the lower surface 812 of the substrate 81. The hollow carrier 80 isa precast chip carrier or a printed circuit board. The substrate 81 issupported by the hollow carrier 80 so that the lower surface 812 of thesubstrate 81 can be flatly mounted and contacted with a heat conductiveor dissipation device.

According to another embodiment of the present invention, the integralLED component can be a DC-LED component or an AC-LED component. Thesubstrate can further comprise an antistatic component, a controlelement, or a sensing element. Further, the N number of LED epitaxialstructures can be laser diode epitaxial structures and the integral LEDcomponent can be an integral laser diode component. The N number of LEDepitaxial structures can also be the epitaxial structures of aconcentrator solar cell and the integral LED component can be anintegral concentrator solar cell.

In actual application, the integral LED component of the presentinvention is made with multiple epitaxial structures, that is to say,there are a plurality of epitaxial substructures on the substrate. Underunit input power, a plurality of miniature epitaxial substructures perunit area can reduce the current through each epitaxial structure by aparallel circuit or a combined series and parallel circuit so as toimprove the luminous efficiency.

In another embodiment of the present invention, the upper surface of theintegral LED component comprises a single large epitaxial structure, atleast one third electrode and at least one fourth electrode. The atleast one third electrode and the at least one fourth electrode areformed on the upper surface and located outside the LED epitaxialstructures. The LED epitaxial structure comprises at least one firstelectrode and at least one second electrode, the polarities of the atleast one first electrode and the at least one second electrode areopposite. The at least one first electrode of the LED epitaxialstructures is electrically connected with the at least one thirdelectrode of the upper surface, and the at least one second electrode ofthe LED epitaxial structures is electrically connected with the at leastone fourth electrode of the upper surface to form a circuit. Thisembodiment is a simplified version of the integral LED component of thepresent invention, a choice for low powered applications.

The present invention also provides a method of manufacturing anintegral LED component to solve the problem in the prior art. Pleaserefer to FIG. 10. FIG. 10 is a flow chart illustrating a method ofmanufacturing a vertical integral LED component according to anembodiment of the invention. The method comprises the following stepsof: step S20: forming an LED epitaxial structure layer on an epitaxialwafer substrate; step S21: forming a light-reflective layer on the LEDepitaxial structure layer and then forming a first bonding metal layeron the light-reflective layer; step S22: forming a second bonding metallayer on a carrier wafer; step S23: wafer bonding the first and thesecond bonding metal layer to form a third metal layer used as a firstelectrode of the LED epitaxial structure layer, so as to manufacture acomposite wafer having the LED epitaxial structure layer; step S24:removing the epitaxial wafer substrate from the composite wafer, so thatthe third metal layer, the light-reflective layer and the LED epitaxialstructure layer can be formed on the carrier wafer; step S25: forming Mnumber of LED structure groups on the carrier wafer, wherein the Mnumber of LED structure groups comprise N number of LED epitaxialstructures, at least one third electrode and at least one fourthelectrode where M and N are natural numbers greater than one, the atleast one third and fourth electrode are located outside the N number ofLED epitaxial structures and have opposite polarities; step S26: formingat least one second electrode on the N number of LED epitaxialstructures of the M number of LED structure groups; step S27: coating adielectric layer within a selected portion of the M number of LEDstructure groups; step S28: manufacturing at least one conductormaterial layer on the dielectric layer for electrically connecting theat least one first electrode, the at least one second electrode, the atleast one third electrode, and the at least one fourth electrode witheach other, so as to form a circuit; and step S29: cutting the M numberof LED structure groups from the carrier wafer to separate the M LEDstructure groups into M number of integral LED components. The integralLED component formed by this method is a vertical integral LED componentwhere the N number of LED epitaxial structures are transferred fromanother epitaxial substrate onto the upper surface of the substrate.

In this embodiment, the method of manufacturing an integral LEDcomponent further comprises the following steps of: providing asolderable metal on the at least one third electrode and the at leastone fourth electrode as a electrode for connecting with an externalpower; providing a phosphor material layer on the surface of the Nnumber of LED epitaxial structures for transferring a blue light or a UVlight into a white light; providing a transparent protective layer onthe M number of integral LED components for protecting the integral LEDcomponents; providing an optical lens above each N number of LEDepitaxial structure for regulating the light emitted by each epitaxialstructure to improve the luminous efficiency of the integral LEDcomponent. When the M number of integral LED components are tested andcut from a wafer, each of the integral LED components are mounted into ahollow carrier that has at least two external electrodes with oppositepolarities and at least two internal electrodes with oppositepolarities. The external electrodes are electrically connected with theinternal electrodes by the same polarity. The at least two externalelectrodes are for connecting to an external power, and the at least twointernal electrodes are for connecting the at least one third electrodeand the at least one fourth electrode. The integral LED component iscombined with the hollow carrier having a circuit structure to form acomplete LED component for end customers. The function of the hollowcarrier is not only providing electrodes for connecting external powerbut being a carrier that supports the substrate of the integral LEDcomponent so that the substrate can be flatly mounted and contacted witha heat conductive or a dissipation device.

Furthermore, the present invention provides another method ofmanufacturing an integral LED component. Please refer to FIG. 11. FIG.11 is a flow chart illustrating a method of manufacturing a lateralintegral LED component according to an embodiment of the invention. Themethod comprises the following steps of: step S30: forming an LEDepitaxial structure layer on an epitaxial wafer substrate; step S31:forming M number of LED structure groups on the epitaxial wafersubstrate with the LED epitaxial structure layer, wherein the M numberof LED structure groups comprise N number of LED epitaxial structures,at least one third electrode and at least one fourth electrode, where Mand N are natural numbers greater than one, and the at least one thirdand fourth electrode are located outside the N number of LED epitaxialstructures with opposite polarities; step S32: forming at least onefirst electrode and at least one second electrode on each N number ofLED epitaxial structure of the M number of LED structure groups, whereinthe polarities of the at least one first electrode and the at least onesecond electrode are opposite; step S33: coating a dielectric layerwithin a selected portion of the M number of LED structure groups; stepS34: manufacturing at least one conductor material layer on thedielectric layer for electrically connecting the at least one firstelectrode, the at least one second electrode, the at least one thirdelectrode, and the at least one fourth electrode with each other, so asto form a circuit; and step S35: cutting the M number of LED structuregroups from the epitaxial wafer substrate to separate the M number ofLED structure groups into M number of integral LED components. Theintegral LED component formed by this method is a lateral integral LEDcomponent where the N number of LED epitaxial structures are formed onan epitaxial substrate directly.

In this embodiment, the method of manufacturing an integral LEDcomponent further comprises the following steps of: providing asolderable metal on the at least one third electrode and the at leastone fourth electrode; providing a phosphor material layer on the surfaceof the N number of LED epitaxial structures; providing a transparentprotective layer on the M number of integral LED components; andproviding an optical lens above each N number of LED epitaxialstructure. The integral LED components is then mounted into a hollowcarrier where the hollow carrier has at least two external electrodeswith opposite polarities and at least two internal electrodes withopposite polarities. The external electrodes are electrically connectedwith the internal electrodes by the same polarity. The at least twoexternal electrodes are for connecting an external power and the atleast two internal electrodes are for connecting the at least one thirdelectrode and the at least one fourth electrode.

According to the above, the cost of the integral LED component of thepresent invention can be greatly reduced due to the simplification ofthe manufacturing process as well as the reduction of materialconsumption. In addition, because the substrate of the invention is notonly a carrier substrate but also a package substrate, and the lowersurface of the substrate can be mounted directly onto a heat conductiveor a dissipation device, the heat conduction distance from the epitaxialstructures to the lower surface of the substrate is shortest. Because ofthis, the heat resistance (Rjc) in the integral LED component can bedramatically reduced. The structure of this integral LED component canbe applied in vertical LED structures and lateral LED structures. Insummary, the present invention, an LED component by integratingepitaxial structures and a package substrate together and the method ofmanufacturing the same, is a versatile technology platform fordeveloping high power LED components with reduced costs.

With the example and explanations above, the features and spirits of theinvention hopefully were well described. More importantly, the presentinvention is not limited only to the embodiments described here. Thoseskilled in the art will readily observe that numerous modifications andalterations of the device may be made while retaining the concept of theinvention. Accordingly, the above disclosure should be construed aslimited only by the metes and bounds of the appended claims.

The invention claimed is:
 1. A method of manufacturing an integral LEDcomponent, comprising the following steps of: forming an LED epitaxialstructure layer on an epitaxial wafer substrate; forming alight-reflective layer on the LED epitaxial structure layer and thenforming a first bonding metal layer on the light-reflective layer;forming a second bonding metal layer on a carrier wafer; wafer bondingthe first and the second bonding metal layer to form a third metal layerused as a first electrode of the LED epitaxial structure layer, so as tomanufacture a composite wafer having the LED epitaxial structure layer;removing the epitaxial wafer substrate from the composite wafer, so thatthe third metal layer, the light-reflective layer and the LED epitaxialstructure layer can be formed on the carrier wafer; forming M number ofLED structure groups on the carrier wafer, wherein the M number of LEDstructure groups comprise N number of LED epitaxial structures, at leastone third electrode and at least one fourth electrode, M and N arenatural numbers greater than one, the at least one third and fourthelectrode are located outside the N number of LED epitaxial structuresand have opposite polarities; forming at least one second electrode onthe N number of LED epitaxial structures of the M number of LEDstructure groups; coating a dielectric layer within a selected portionof the M number of LED structure groups; manufacturing at least oneconductor material layer on the dielectric layer for electricallyconnecting the at least one first electrode, the at least one secondelectrode, the at least one third electrode, and the at least one fourthelectrode with each other, so as to form a circuit; and cutting the Mnumber of LED structure groups from the carrier wafer to separate the MLED structure groups into M number of integral LED components.
 2. Themethod of manufacturing an integral LED component of claim 1, furthercomprising the step of: providing a solderable metal on the at least onethird electrode and the at least one fourth electrode.
 3. The method ofmanufacturing an integral LED component of claim 1, further comprisingthe step of: providing a phosphor material layer on the surface of the Nnumber of LED epitaxial structures.
 4. The method of manufacturing anintegral LED component of claim 1, further comprising the step of:providing a transparent protective layer on the M number of integral LEDcomponents.
 5. The method of manufacturing an integral LED component ofclaim 1, further comprising the step of: providing an optical lens aboveeach N number of LED epitaxial structure.
 6. The method of manufacturingan integral LED component of claim 1, further comprising the step of:embedding the integral LED component within a hollow area of a hollowcarrier, wherein the hollow carrier has two conductive electrodes withopposite polarities used for connecting to an external power, and thetwo conductive electrodes of the hollow carrier are used forelectrically connecting the at least one third electrode and the atleast one fourth electrode, and the lower surface of the substrate ofthe integral LED component is exposed to the hollow carrier.